III-V Lab conducts Research and Development activities
to create state-of-the-art components and enable major advances in system performances |
Multi Format High Speed linear Preamplified Receiver Operating at 100 Gbit/s NRZ-OOKREFERENCE: Christophe. Caillaud, Robert Borkowski, Fabrice Blache, Filipe Jorge, Michel Goix,
Bernadette Duval, Rene Bonk, Franck Mallecot
| ![]() ![]() High baud rate and multi-level capability of preamplified receiver | |
106-GHz bandwidth InP DHBT linear driver with a 3-Vppdiff swing at 80 GBd in PAM-4New differential linear drivers with 0.7-mm emitter width are designed, fabricated and characterized at the III-V Lab based upon indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-signal electrical characterisation shows 80- GBd symbol-rate four-level pulse amplitude (PAM-4) modulation conjugated with a driver output swing of 3-Vppdiff and a 0.74-W power consumption. Thus resulting in a 1.22-GBd driving efficiency, the highest in over 70-GBd drivers’ state-of-the-art to date. Accordingly, S-parameter measurements of the standalone linear driver exhibit the highest gain-bandwidth product of 556 GHz. REFERENCE: R. Hersent, F. Jorge, B. Duval, J.-Y. Dupuy, A. Konczykowska, M. Riet, V. Nodjiadjim, C. Mismer, F. Blache, A.-E. Kasbari and A. Ouslimani |
![]() InP DHBT linear driver 80-GBd PAM-4 output eye diagram with a 3-Vppdiff swing |
![]() Measured and simulated S-parameter of InP DHBT linear driver |
Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO2/Si and InP SubstratesThis study aims at qualifying a very thick vertical p-i-n diode (3 μm) regrown onto an InP-SiO2/Si (InPoSi) substrate together with the one obtained as a reference, in the same growth run, on an InP substrate. This design intends to suppress potential internal losses induced by the p++-doped contact layer on top of the structure by adding a 2 μm-thick InP:p cladding layer above the active region. REFERENCE:C. Besancon et al.
|
![]() Vertical current collection scheme structure grown on InPoSi: (a) Schematic of the structure; (b) Atomic Force Microscope image; (c) Cross-sectional Scanning Transmission Electron Microscopy image. |
![]() Photoluminescence signal measured at RT on the structure grown on an InP substrate (red) and on InPoSi (blue). ![]() J-L characteristics in pulse regime at 20_C: laser on InPoSi (solid line) and the laser on InP (dash line). |
III-V on Silicon photonic platformREFERENCE:Joan Manel Ramirez , Hajar Elfaiki, Théo Verolet, Claire Besancon, Antonin Gallet , Delphine Néel,
Karim Hassan , Ségolène Olivier, Christophe Jany, Stéphane Malhouitre, Kamil Gradkowski ,
Padraic E. Morrissey, Peter O’Brien, Christophe Caillaud, Nicolas Vaissière, Jean Decobert ,
Shenghui Lei, Ryan Enright, Alexandre Shen, and Mohand Achouche
|
![]() a)Optical mode transition between III-V and Silicon waveguides b)III-V on Silicon waveguide cross section |
![]() Wavelength tunability of a heterointegrated laser |
DFB RIDGE LASER DIODES AT 852 NM AND 894 NM FOR CESIUM ATOMIC CLOCKSWe have demonstrated DFB Ridge laser diodes emitting at 852nm and 894nm, at room temperature, and their packaging in hermetic TO-3 can, addressing the pumping of Cs. These lasers respond to all specifications required for the realization of very stable optically pumped compact industrial Cesium beam atomic clocks. Indeed, they show a low threshold current, a high external differential efficiency, with emission in a single spatial mode and in a single frequency, with a very high side mode suppression ratio and a linewidth less than 1MHz. REFERENCE: M. Garcia, C. Theveneau, P.A. Roxo, A. Larrue, P. Resneau, Y. Robert, E. Vinet, J.P. Legoec, O.Parillaud, B. Gérard, M. Krakowski
|
![]() Schematic view of the ridge DFB laser with Aluminium free active region (Quantum Well: GaInAsP, Optical Confinement: GaInP) grown by two steps Metal Organic Vapor Phase Epitaxy (MOVPE) ![]() Scanning Electron Microscopy (SEM) picture of the Bragg grating realized by e beam lithography |
![]() Light- current and efficiency-current characteristics showing low threshold current and high efficiency of the DFB laser emitting at 852nm ![]() Optical spectrum at 22°C and 75mA showing an emission at 852.12nm (Cs D2 line) with a very high rejection of the side modes |
Record Pulse Energy (201pJ) Passively Mode-Locked Monolithic Tapered LaserWe demonstrate a very-long (13.5 mm) monolithic multi-section tapered laser reaching 201pJ mode-locked (ML) pulses at low repetition frequency of 2.89 GHz with a pulse width of 11ps (compressed to 2.4ps). To the best of our knowledge, this is the first demonstration of a fundamental frequency ML at such low PRF in a centimeter-long monolithic semiconductor laser. This is also a demonstration of a record high pulse energy from the electrically pumped laser diode without any additional amplification stage. REFERENCE: Michel Krakowski , Patrick Resneau, Michel Garcia, Eric Vinet, Yannick Robert, Olivier Parillaud, Bruno Gérard, Stefan Kundermann, Nicolas Torcheboeuf , and Dmitri L. Boiko
|
![]() Schematic diagram of the very long (13.5mm) monolithic multi-sections tapered laser |
![]() RF spectrum of the monolithic multi-section tapered laser. Pulse Repetition Frequency is 2.886GHz thanks to the very long laser cavity. |
Demonstration of a 10W GaN integrated amplifier for 5G millimeter wave band based on InAlGaN/GaN HEMT TechnologyGallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are now widely used inside RF systems, thanks to their high power handling capabilities and efficiency. However, today, most of the power amplifiers (PA) designed on GaN HEMTs technology are based on AlGaN/GaN/SiC heterostructure. III-V Lab develops an alternative HEMT structures based on the quaternary barrier layer InAlGaN on SiC substrate which may lead to enhanced electrical performances with reduced epitaxial strain the structure. Our technology shows less dispersive effects partially due to an innovative AlGaN Back-Barrier in the buffer layer, optimized for power application, which suggests a particular interest for high frequency power amplification. REFERENCE: C. Potier, S. Piotrowicz, C. Chang, O. Patard, L. Trinh-Xuan, J. Gruenenpuett, P. Gamarra1,
P. Altuntas, E. Chartier, D. Lancereau, C. Lacam, N. Michel, S.L. Delage |
![]() InAlGaN/HEMT structure used for millimetre waves applications ![]() 10W GaN integrated amplifier for 5G millimeter wave band based on InAlGaN/GaN HEMT Technology | ![]() On-wafer pulsed small-signal measurements of 40 amplifiers (red) and test jig conditions (blue) in CW mode at VDSq =15V and IDSq =150mA/mm. |
0.7-μm InP DHBT Technology With 400-GHz fT and fMAX and 4.5-V BVCE0 for High Speed and High Frequency Integrated CircuitsWe demonstrated the performance of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and fMAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology. REFERENCE: V. Nodjiadjim, M. Riet, C. Mismer, R. Hersent, F. Jorge, A. Konczykowska, J.-Y. Dupuy,
|
![]() SEM photograph of a 0.7x5-µm² InP DHBT before interconnection level ![]() Frequency performance variation of 0.7x5-µm² DHBTs across a 3-inch wafer |
![]() ![]() 2:1-Selector circuit microphotograph and measured 212-Gb/s output signal |
Ultrafast Tunable laserREFERENCE: T. Verolet et al.,
|
![]() PIN junction-based tunable laser |