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III-V Lab experts working in a cleaning room

III-V Lab conducts Research and Development activities to create state-of-the-art components and enable major advances in system performances.


III-V Lab at Photonics West 2024 in San Francisco, California, United States

January 2024 -Two invited paper were presented by Joan Manel Ramírez and Frederic van Dijk at Photonics West 2024. Our III-V Lab experts have also co-authored 5 other papers including 3 invited papers. Learn more

2024 a special year for III-V Lab celebrating its 20th anniversary!

January 2024 - See our logo dedicated to this celebration at the top of the home page.

III-V Lab at IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

October 2023 - For an oral presentation :« 100 GBaud DSP-free PAM-4 optical signal generation using an InP-DHBT AMUX-driver and a Thin-Film Lithium Niobate Modulator Assembly ». These results were obtained in the H2020-ICT projects called QAMeleon and TWILIGHT.

III-V Lab at INP - Phelma in Grenoble

October 2023 - A stand at this student forum to exchange with students.

III-V Lab at INSA Rennes

October 2023 - III-V Lab was at the Institut National des Sciences Appliquées de Rennes to exchange with students from the Engineering Physics and Materials sector. This privileged moment was an opportunity to explain how III-V semiconductors are key for applications in photonics and microelectronics, and hopefully to create vocations.

A fruitful collaboration between teams of Nokia Networks France, Thales Research and Technology, CEA-Leti and III-V Lab on a III-V/SOI platform using wafer-bonding which allows integration of lasers.

July 2023 - The invited paper presented at the 28th Optoelectronics and Communications Conference (OECC 2023) explains how we demonstrated new lasers leveraging innovations this platform provides: nanosecond wavelength tuning laser, 10GHz-frequency continuous tuning DFB laser and a new few mode-locking laser. « III-V/SOI as a versatile platform for innovative hybrid lasers: from fast tunable lasers to multimode DFB comb-source lasers »

III-V Lab at Paris Air Show

June 2023 - A III-V Lab innovation exposed at Paris Air Show 2023 in the Thales pavilion (B1 - Le Bourget, France).

High efficiency and high bandwith preamplifier receiver for high speed networks

Results published in scientific journals or at conferences

III-V on Silicon photonic platform

REFERENCE: Joan Manel Ramirez, Hajar Elfaiki, Théo Verolet, Claire Besancon, Antonin Gallet, Delphine Néel, Karim Hassan, Ségolène Olivier, Christophe Jany, Stéphane Malhouitre, Kamil Gradkowski, Padraic E. Morrissey, Peter O’Brien, Christophe Caillaud, Nicolas Vaissière, Jean Decobert, Shenghui Lei, Ryan Enright, Alexandre Shen, and Mohand Achouche
"III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated Circuits"
IEEE Journal of Selected Topics in Quantum Electronics, vol. 26, no. 2, pp. 1-13, March-April 2020, Art no. 6100213, doi: 10.1109/JSTQE.2019.2939503.

Two images described below

a)Optical mode transition between III-V and Silicon waveguides
b)III-V on Silicon waveguide cross section

A graphic showing the tunability

Wavelength tunability of a heterointegrated laser

Multi Format High Speed linear Preamplified Receiver Operating at 100 Gbit/s NRZ-OOK

REFERENCE: Christophe Caillaud, Robert Borkowski, Fabrice Blache, Filipe Jorge, Michel Goix, Bernadette Duval, Rene Bonk, Franck Mallecot
ECOC - 6-10 December 2020

Two measurements in dBm Two measurements in ps

High baud rate and multi-level capability of preamplified receiver

Ultrafast Tunable laser

REFERENCE: T. Verolet et al.,
"Hybrid III-V on Silicon Fast and Widely Tunable Laser Based on Rings Resonators with PIN Junctions,"
2018 Asia Communications and Photonics Conference (ACP), Hangzhou, 2018, pp. 1-3, doi: 10.1109/ACP.2018.8596161.

Schema of the tunable laser and measurement

PIN junction-based tunable laser

106-GHz bandwidth InP DHBT linear driver with a 3-Vppdiff swing at 80 GBd in PAM-4

New differential linear drivers with 0.7-mm emitter width are designed, fabricated and characterized at the III-V Lab based upon indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-signal electrical characterisation shows 80- GBd symbol-rate four-level pulse amplitude (PAM-4) modulation conjugated with a driver output swing of 3-Vppdiff and a 0.74-W power consumption. Thus resulting in a 1.22-GBd driving efficiency, the highest in over 70-GBd drivers’ state-of-the-art to date. Accordingly, S-parameter measurements of the standalone linear driver exhibit the highest gain-bandwidth product of 556 GHz.

REFERENCE: R. Hersent, F. Jorge, B. Duval, J.-Y. Dupuy, A. Konczykowska, M. Riet, V. Nodjiadjim, C. Mismer, F. Blache, A.-E. Kasbari and A. Ouslimani
“106-GHz bandwidth InP DHBT linear driver with a 3-Vppdiff swing at 80 GBd in PAM-4”,
Electronics Letters, pp. 1-2, April 2020. doi: 10.1049/el.2020.0654

Eye diagram

InP DHBT linear driver 80-GBd PAM-4 output eye diagram with a 3-Vppdiff swing

Simulated S-parameter

Measured and simulated S-parameter of InP DHBT linear driver

Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO2/Si and InP Substrates

This study aims at qualifying a very thick vertical p-i-n diode (3 μm) regrown onto an InP-SiO2/Si (InPoSi) substrate together with the one obtained as a reference, in the same growth run, on an InP substrate. This design intends to suppress potential internal losses induced by the p++-doped contact layer on top of the structure by adding a 2 μm-thick InP:p cladding layer above the active region.

REFERENCE:C. Besancon et al.
“Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates,”
IEEE Photonics Technol. Lett., vol. 32, no. 8, pp. 469–472, Apr. 2020

a, b, c figures

Vertical current collection scheme structure grown on InPoSi: (a) Schematic of the structure; (b) Atomic Force Microscope image; (c) Cross-sectional Scanning Transmission Electron Microscopy image.

PL measurement

Photoluminescence signal measured at RT on the structure grown on an InP substrate (red) and on InPoSi (blue).

Output power vs current density graph

J-L characteristics in pulse regime at 20_C: laser on InPoSi (solid line) and the laser on InP (dash line).


We have demonstrated DFB Ridge laser diodes emitting at 852nm and 894nm, at room temperature, and their packaging in hermetic TO-3 can, addressing the pumping of Cs. These lasers respond to all specifications required for the realization of very stable optically pumped compact industrial Cesium beam atomic clocks. Indeed, they show a low threshold current, a high external differential efficiency, with emission in a single spatial mode and in a single frequency, with a very high side mode suppression ratio and a linewidth less than 1MHz.

REFERENCE: M. Garcia, C. Theveneau, P.A. Roxo, A. Larrue, P. Resneau, Y. Robert, E. Vinet, J.P. Legoec, O.Parillaud, B. Gérard, M. Krakowski
OPTRO2020 paper 45

Schematic view

Schematic view of the ridge DFB laser with Aluminium free active region (Quantum Well: GaInAsP, Optical Confinement: GaInP) grown by two steps Metal Organic Vapor Phase Epitaxy (MOVPE)

SEM picture

Scanning Electron Microscopy (SEM) picture of the Bragg grating realized by e beam lithography

Optical power vs current graph

Light- current and efficiency-current characteristics showing low threshold current and high efficiency of the DFB laser emitting at 852nm

Optical power vs wavelegth graph

Optical spectrum at 22°C and 75mA showing an emission at 852.12nm (Cs D2 line) with a very high rejection of the side modes

Record Pulse Energy (201pJ) Passively Mode-Locked Monolithic Tapered Laser

We demonstrate a very-long (13.5 mm) monolithic multi-section tapered laser reaching 201pJ mode-locked (ML) pulses at low repetition frequency of 2.89 GHz with a pulse width of 11ps (compressed to 2.4ps). To the best of our knowledge, this is the first demonstration of a fundamental frequency ML at such low PRF in a centimeter-long monolithic semiconductor laser. This is also a demonstration of a record high pulse energy from the electrically pumped laser diode without any additional amplification stage.

REFERENCE: Michel Krakowski , Patrick Resneau, Michel Garcia, Eric Vinet, Yannick Robert, Olivier Parillaud, Bruno Gérard, Stefan Kundermann, Nicolas Torcheboeuf , and Dmitri L. Boiko
"Stabilized High Pulse Energy Passively Mode-Locked Monolithic and External Cavity Tapered Lasers for Space Applications"

schematic diagram

Schematic diagram of the very long (13.5mm) monolithic multi-sections tapered laser

power vs frequency graph

RF spectrum of the monolithic multi-section tapered laser. Pulse Repetition Frequency is 2.886GHz thanks to the very long laser cavity.

Demonstration of a 10W GaN integrated amplifier for 5G millimeter wave band based on InAlGaN/GaN HEMT Technology

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are now widely used inside RF systems, thanks to their high power handling capabilities and efficiency. However, today, most of the power amplifiers (PA) designed on GaN HEMTs technology are based on AlGaN/GaN/SiC heterostructure. III-V Lab develops an alternative HEMT structures based on the quaternary barrier layer InAlGaN on SiC substrate which may lead to enhanced electrical performances with reduced epitaxial strain the structure. Our technology shows less dispersive effects partially due to an innovative AlGaN Back-Barrier in the buffer layer, optimized for power application, which suggests a particular interest for high frequency power amplification.

REFERENCE: C. Potier, S. Piotrowicz, C. Chang, O. Patard, L. Trinh-Xuan, J. Gruenenpuett, P. Gamarra1, P. Altuntas, E. Chartier, D. Lancereau, C. Lacam, N. Michel, S.L. Delage
"10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology "
Proceedings of the 49th European Microwave Conference, 1– 3 Oct 2019, Paris, France, Publisher IEEE

Cross sectionnal structure overview

InAlGaN/HEMT structure used for millimetre waves applications


10W GaN integrated amplifier for 5G millimeter wave band based on InAlGaN/GaN HEMT Technology

S21 parameter vs frequency graph

On-wafer pulsed small-signal measurements of 40 amplifiers (red) and test jig conditions (blue) in CW mode at VDSq =15V and IDSq =150mA/mm.

0.7-μm InP DHBT Technology With 400-GHz fT and fMAX and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits

We demonstrated the performance of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and fMAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.

REFERENCE: V. Nodjiadjim, M. Riet, C. Mismer, R. Hersent, F. Jorge, A. Konczykowska, J.-Y. Dupuy,
" 0.7-μm InP DHBT technology with 400-GHz fT and fMAX and 4.5-V BVCE0 for high speed and high frequency integrated circuits,"
in IEEE Journal of the Electron Devices Society, vol. 7, pp. 748-752, 2019. DOI: 10.1109/JEDS.2019.2928271

SEM photograph

SEM photograph of a 0.7x5-µm² InP DHBT before interconnection level

ft and f max graph

Frequency performance variation of 0.7x5-µm² DHBTs across a 3-inch wafer

Photograph of the circuit

2:1-Selector circuit microphotograph

Output signal

Measured 212-Gb/s output signal