NEWS  PUBLICATIONS  PRESS RELEASE  PROJECTS  CONTACT US
Merry Christmas and Happy New Year
 Research & Development 
Laser Diodes & Optical Amplifiers
Photodiodes
Infra-Red Imagery Sensors
InP HBTs for Mixed Signals
GaN for Power & Microwave
 Products & Services 
Foundry Services
Datasheets
Certificate
 Core Competencies 
III-V Epitaxy
III-V/Si Device Integration
Processing
Design & Characterization
Packaging
 About Us 
Mission
Facilities
Contact & Location

First electro-optic modulator driver circuit, operating at 100Gb/s with sufficiently large swing has just been measured at III-V Lab!

This circuit combines two 50 Gb/s data streams to provide a very clean 6V (2x3V differential) output signal to drive the modulator.
This will enable 100Gb/s per wavelength optical transmission, in the simplest format (on-off keying), with an up-to-now unachievable quality.
This team result establishes a new state-of-the-art, thanks to III-V Lab design, process and characterization staff.
 
 

InGaAs Focal Plane Array (FPA) 640x512 pixels with a pitch of 15 µm developped at III-V Lab

It was developped in the Intense program founded by the French MOD.
The Visible Short Wavelength Infra Red (VisSWIR) detection is from 0.4 µm to 1.7 µm and is intended for low light level applications.

640x512 @ 15µm VisSWIR InGaAs picture


InGaAs FPA sensor
 
Updated on 19 December 2011

 LEGAL NOTICE  All rights reserved © Copyright 2007 G.I.E Alcatel Thales III-V Lab, France.