The world's-first WVGA 10-µm pitch GaN microdisplays for augmented reality video (May 2017)

Presented at Display Week in Los Angeles, May 21-26
Leti will present that new technology at Display Week in an invited talk, “A Novel Process for Fabricating High-Resolution and Very Small Pixel-pitch GaN LED Microdisplays”. The presentation at 5 p.m., May 23, will demonstrate the feasibility of LED arrays with pixel pitch as small as 3 µm, which is a world record.
These results, presented by Leti were obtained under III-V Lab collaborative workprogramme, see the press release.

Season's Greetings (December 2016)

“Haute couture” photonics: (June 2016)

Almae technologies takes French excellence and innovation in nanoelectronics, led by III-V Lab, to an industrial scale
Almae technologies is commercializing an innovative photonic technology developed by teams from Nokia Bell Labs, Thales and the CEA at III-V Lab to address telecom and data storage center demands for high speed optical data transmission.
The startup has the industrial infrastructure to rapidly bring to market advanced components required to keep pace with the rapid growth in Internet data volumes.
See the press release and the French press release.

LED microdisplays at Display Week, San Francisco :(May 2016)

Display Week 2016 - International Symposium, Seminar and Exhibition May 22-May 27, 2016 San Francisco, California
Last results on LED microdisplays were presented : « GaN-based Emissive Microdisplays: a Very Promising Technology for Compact, Ultra-high Brightness Display Systems ».

III-V Lab partner of Mirphab a pilot line for Photonics (February 2016)

Mirphab is one of the three pilot lines launched by Europe
MIRPHAB, coordinated by the CEA-Leti is a pilot line with a miniaturized laser technology for low cost low power consumption and compact sensors. Press release available here.

Doggies (January 2016)

The FP7-Security european project DOGGIES (Detection of olfactory traces by orthogonal gas identification technologies) coordinated by III-V Lab ended with a success: the prototype was presented at the workshop organized in Athens.

Season's Greetings (December 2015)

III-V Lab Partner in Silicon Photonics Supply-Chain Project (18 November 2015)

PLAT4M Project Focused on Speeding Industrialization of the Technology
III-V Lab have co-developed with Leti, integrated hybrid III-V lasers and electro-absorption modulators (EAM) on silicon using a wafer bonding technique, confirming strong potentials for telecom applications.
See the Press Release.

III-V Quantum dots & dashes on Silicon: a breakthrough towards efficient 16 x 25 Gb/s WDM photonic integrated circuits (October 2015)

Significant advances in silicon photonic integrated circuits (PICs) have been achieved in the European FP7 project SEQUOIA (energy efficient Silicon Emitter using heterogeneous integration of III-V QUantum dOt and quantum dash materIAls).
More information on the press release.

Workshop on “Laser Diodes for Space Applications”

23-24 November 2015
III-V Lab, Palaiseau

The workshop is organized in the frame of the FP7-Space Project BRITESPACE.
More information here.

Workshop on InP HBT technology activities in Europe

8th October 1pm to 9th October 2pm
III-V lab, Palaiseau

The workshop is organized in the frame of the Marie Curie FP7-PEOPLE-2013-ITN European Industrial Doctorates project “IN-POWER – InP DHBT MMIC Technology for Millimeter-Wave Power Applications”.
More information here.

Innovation Award for the Micro-LED Arrays at Tech Connect World 2015 (June 2015)

Inorganic (GaN - InGaN) microLED arrays for light projection or Head Up Displays and Head Mounted Displays
The demo showed on the CEA Tech booth receives an innovation award. "This technology is the first demonstration of a high density micro-LED array scalable to a standard microelectronic large scale process"(reference)

Leti Demos New Process to Fabricate High-brightness Micro-LED Arrays for Next-gen Head-mounted and Head-up Displays (June 2015)

Gallium-nitride (GaN) and Indium Gallium-nitride (InGaN) Technology Targets Fast-growing Markets for Wearable Vision Systems
The high-density micro-LED array process was developed in collaboration with III-V Lab.
The high-brightness, enhanced-vision systems such as head-up and head-mounted displays can improve safety and performance in fields such as aeronautics and automotive, where the displays allow pilots and drivers to receive key navigation data and information in their line of sight. For consumers, smart glasses or nomadic projection devices with augmented reality provide directions, safety updates, advertisements and other information across the viewing field. LED microdisplays are ideally suited for such wearable systems because of their low footprint, low power consumption, high-contrast ratio and ultra-high brightness.
More information on the press release (and french version).

mirSense signs infrared spectrometry agreement with Alcatel-Lucent, Thales and CEA-Leti (May 2015)

Alcatel-Lucent, Thales and CEA-Leti have signed a memorandum of understanding with mirSense, a start-up formed by Mathieu Carras and Mickael Brun, to market a disruptive technology developed by their joint research unit, III-V Lab. mirSense will manufacture miniaturised tunable laser sources that are expected to revolutionise the infrared spectrometry market.
More information on the press release.

III-V Lab featured in the last issue of Innovations magazine (February 2015)

In brief: "The III-V Lab is the most advanced research facility of its kind in Europe".
The third issue of Innovations magazine is now available on Thales website in the press room section.
Click on direct link and go to pages 28 to 31.
Enjoy the reading!

Season's Greetings (December 2014)

PANTHER an ICT project explained by a video (November 2014)

III-V Lab is involved in the ICT project called PANTHER (
PANTHER is a 3-year collaborative project on photonic integration that brings together eight leading European universities, research centers and companies.
The project was launched in January 2014 and is co-funded by the European Commission through the Seventh Framework Programme (FP7).
See the video

III-V lab establishes a new reference for high speed optical communications (October 2014)

As part of FP7/POLYSYS project, III-V lab and the project consortium have demonstrated a 2x100 Gb/s transmitter and a 4x100 Gb/s receiver as key components for multi-100 GbE and 400 GbE optical interfaces in future intra-data center networks.
Compared to other approaches, the two devices can provide significant advantages in terms of number of components, simplicity, footprint and cost, as they are capable of serial operation with non-return-to-zero on-off keying (NRZOOK) format directly at 100 Gb/s.

The transmitter is based on the monolithic integration of a multi-mode interference coupler with two Mach-Zehnder modulators on an electro-optic polymer chip. This chip is co-packaged together with an InP laser diode and two multiplexing and driving circuits. The receiver is based on hybrid integration of a quad array of InP photodiodes with two demultiplexing circuits.
By combining these two devices over standard single-mode fibers without dispersion compensation the consortium achieved a BER better than 10-8 after 1625 m at 2x80 Gb/s, as well as a BER better than 10-7 after 1000 m at 2x100 Gb/s.

Future plans include the development of tunable 100 GbE interfaces for optical circuit switched domains inside data center networks. (FP7/POLYSYS project)

ECOC 2014, Cannes, France (September 2014)

III-V Lab was present at ECOC 2014 as exhibitor. The operation of our Tunable Silicon Photonic Laser Assembly was demonstrated on our stand n°133.
European Conference on Optical Communications (ECOC 2014) is the largest conference on optical communication in Europe, and one of the most prestigious and long-standing events in this field.

III-V Lab also contributed to the scientific animation of the conference. On 21st September, III-V Lab co-organized with University of Kassel (Germany) a workshop entitled “Which laser sources for silicon photonics?”.

Several talks were also given during the conference amongst which:
  • New Advances on Heterogeneous Integration of III-V on Silicon by Guang-Hua Duan
  • Packaged Hybrid III-V/Silicon SOA by Peter Kaspar
  • High Sensitivity 40 Gbit/s Preamplified SOA-PIN/ TIA Receiver Module for High Speed PON by Christophe Caillaud
  • Hybrid III-V/Silicon Tunable Laser Directly Modulated at 10GBit/s for Access Networks by Guillaume Levaufre
  • and Record Gain x Bandwidth (6.1 THz) Monolithically Integrated SOA-UTC Photoreceiver for 100 Gbit/s Applications by Maria Anagnosti
III-V lab is proud that Maria Anagnosti was awarded the 2d price of the best paper.

List of papers ant abstracts can be found at

GFP 2014, Cité Universitaire, Paris, France (August 2014)

III-V Lab is a member of the local organization committee of the Group IV Photonics conference, the largest conference on Silicon Photonic. More info on

Paper presented at the ICMOVPE conference(July 2014)

Latest results on GaN growth on SiC substrates obtained during the MANGA project from the European Defence Agency (EDA) and the EuSiC project (FP7-Space Activity) will be presented in session Mon-Oral-1-2: "Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT structures" by Piero Gamarra, Cedric Lacam, Maurice Tordjman, Jörg Splettstösser, Bernd Schauwecker and Marie-Antoinette di Forte-Poisson.

III-V Lab celebrates his 10 years (01 July 2014)

A success model in the III-V components’ high-tech world.

In July 2004, Alcatel and Thales create III-V Lab in gathering and sharing means. Since then, Alcatel becomes Alcatel Lucent, CEA joins the French Group of Economic Interest and the III-V Lab activity domain spreads out…

A particular legal and sales structure
Today, III-V Lab celebrates its 10 years. Over years, this birthday shows the success of the Group of Economic Interest, a French structure between a company and a professional association, which allows several companies sharing their means to extend their economic activity addressing a particular activity domain in common.

Competencies enlarged during years
Initially focused on nanotechnologies and opto-electronic components based on III-V semiconductors (Gallium Arsenide, Indium Phosphor, Gallium Nitride…) the CEA entering allows, with the help of the Leti in Grenoble, to speed up the development of the III-V component heterogeneous integration with Silicon.

A world renowned team
With researchers well known all over the world, invited to present their results in the best international scientific conferences, III-V Lab was able to set up and maintain a network and a collaborative research eco-system that constitutes the engine of our open innovation approach.

Worldwide cooperations in research projects
From now on, III-V Lab is known in the European R&D ecosystem for its collaborative approach and its capability of innovating. Since 10 years, III-V Lab is involved in several European and French research projects and works as well with its mother companies set up all over the world.

Scientific and technical results at the state-of-the-art
At present, III-V Lab teams protect more than 25 patents per year. The ready-to-market technologies of the laboratory are transferred to subsidiaries or to business partners of mother companies, as it happened for infrared detection, transferred to the Sofradir company in 2013.

A sales offer in products and services for Telecoms, Space, Defence and Safety applications
III-V Lab has also received ISO 9001 certificate for its diversified sales offer in III-V components prototypes or pre-series (chips, packaged chips or modules), advanced foundry services (wafers, technology process), or industrial services (thermal, electronic or optoelectronic simulations, made-to-measure circuits modeling, as well as technological transfers).

To mark this birthday, III-V Lab invites you to visit its new website.

Optics Valley at III-V Lab (June 2014)

III-V Lab receives Optics Valley network in Palaiseau.
The day encounters a real success by Optics Valley network, with more than 75 participants of more than 50 companies. François Luc, Chairman and Managing Director of III-V Lab, described the laboratory activities.
More details are available at

European project "HIPPO" makes its first steps (April 2014)

See the press release .


HIPPO is a 3 year Research & Development, Collaborative project co-funded by the European Union (REA - Space Unit). The project aims to design and develop a new generation of robust and reliable high-power photonic components and modules, demonstrate applicability to space applications and prove that the technology can operate in the stringent requirements set by the space environment.

More info on

OFC 2014, San Francisco, California (March 2014)

III-V Lab is present at OFC 2014, as exhibitor.
OFC (Optical Fiber Communication) brings the thought leaders and solutions providers ready with the cutting-edge ideas and fiber optic solutions to enhance your systems and revolutionize networks.

Several talks are also given during the conference::
  • Single Quantum Dash Mode-Locked Laser as a Comb-Generator in Four-Channel 112 Gbit/s WDM Transmission - M. Gay & al. (Tu2H.5)
  • AWG-DBR-based WDM Transmitter fabricated in an InP Generic Foundry Platform - K. Lawniczuk & al. (Tu3H.2)
  • Operation of a RSOA WDM PON Self-seeded Transmitter Over More than 50 km of SSMF up to 10 Gb/s - P. Parolari & al. (W3G.4)
  • 70km external cavity DWDM sources based on O-band Self Seeded RSOAs for transmissions at 2.5Gbit/s - G. Simon & al. (W3G.5)
  • Complete Si-Photonics Device-library on 300mm wafers - D. Fowler & al. (Th2A.22)

New job PhD openings for ITN-Getpics project (March 2014)

The Technical University of Eindhoven and III-V Lab provide a joint PhD training environment for three PhD researchers to develop and study generic technologies for next generation WDM transmitter technology.
This is in the framework of a recently awarded Marie Curie Initial Training Network project.

Three different PhD positions are offered within the Initial Training Network. Each PhD student position will be based for two years at TU/e in Eindhoven, The Netherlands and also for two years in III-V Lab in Palaiseau, France.

Integrated wavelength division multiplexed (WDM) transmitter design and characterisation See also: link

Buried heterostructures in generic photonic technology for efficient WDM transmitters See also: link

Selective area growth in generic photonic integration for high capacity WDM transmitters See also: link

PHOTONICS WEST 2014, San Francisco, California (February 2014)

III-V Lab is present at PW2014, as an exhibitor. Come and see our cascade lasers on booth n°4008.
SPIE Photonics West is the premier photonics and laser event. With more than 1,250 companies, this exhibition continues to be the flagship event to find the latest products, tools, and applications for research or business needs.

The papers presented by III-V lab as first author, during the conference are:
  • Mode-locked InAs/InP quantum-dash-based DBR laser with monolithically integrated SOA - Siddharth Joshi & al. (Invited Paper,9002-11)
  • Advances toward monolithic broadly-tunable QCL sources - Mathieu Carras & al.(Invited Paper,8993-43)
  • Photonic integrated circuit on InP for millimeter-wave generation - Frederic van Dijk & al. (Invited Paper,8988-25)
  • Hybrid III-V on silicon lasers for photonic integrated circuits on silicon - Guang-Hua Duan (Invited Paper,9002-32)
  • Very high-power broad area laser diode with internal wavelength stabilization at 975 nm for Yb fibre laser pumping - Michel Krakowski & al. (9002-51)

Using III-V Lab 100G circuit, Alcatel-Lucent demonstrates Tb/s transmission over 3200km (March 2013)

A 1-Tb/s demonstration was shown at OFC/NFOEC conference (19-21 March 2013, Anaheim CA, USA), running during the whole exhibition.
It included a five dual-carrier channels transmission over 3200 km at 5.2-b/s.Hz spectral efficiency, using coherent detection, off-line digital signal processing, and soft-decision forward error correction.

The 1-Tb/s dual-carrier PDM-16QAM (dual-polarization quadrature amplitude modulation) transmission is based on all-electronic 80-GBaud modulation per subcarrier, achieved thanks to the state-of-the-art multiplexer designed, fabricated and packaged in III-V Lab. The performance of this integrated circuit was the key to setting up this demonstration.

This same circuit was used in the experiment reported as postdeadline paper at OFC 2013 conference: "Single-carrier 400G interface and 10-channel WDM transmission over 4800 km using all-ETDM 107-Gbaud PDM-QPSK", by Gregory Raybon and colleagues from Alcatel-Lucent Bell Laboratories, USA, and Agnieszka Konczykowska, Filipe Jorge, and Jean-Yves Dupuy, from III-V Lab, a joint laboratory of Alcatel-Lucent Bell Labs, Thales Research & Technology and CEA-Leti.
III-V Lab component III-V Lab chip


Sofradir acquires infrared technologies from Safran and Thales (November 2012)

By acquiring the technologies of Safran, Thales and the GIE III-V Lab (Thales, Alcatel-Lucent, CEA), Sofradir consolidates French infrared (IR) technologies under one roof, bolstering its capabilities in the imaging sector. See the press release.