Advanced III-V heterostructures epitaxy
The III-V lab has developed epitaxial growth processes by Metal Organic Vapour Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) and Halide Vapour Phase Epitaxy (HVPE), on various substrates such as GaAs,
InP and GaSb for both optoelectronic and microelectronic devices, as well as on SiC and Si for GaN microwave devices.
team is available to provide device designers with the properly engineered arsenide, phosphide and antimonide heterostructures, mixing
various types of abrupt or graded heterojunctions, incorporating quantum wells or quantum dots, or strained material layers.
Control & Monitoring
Besides in situ monitoring of grown layers, a full set of in house characterization tools are available including high precision X-ray double diffraction, room and low temperature photoluminescence, dopant
and mobility profiling. More advanced characterization is subcontracted to local partners.
Multi-wafer MOVPE reactor
Multi-wafer MBE reactor (RIBER 49)
|Several epitaxial growth reactors are available at III-VLab, such as this multi-wafer RIBER 49 MBE reactor. Highly uniform structures for
Infra-red Quantum Well detectors and Quantum Cascade lasers can be grown in this reactor equipped with solid source effusion cells.
|Quantum dots active region of a 1.55 µm laser is grown by GS-MBE. Following growth conditions optimization, up to 12 layers can be incorporated in the active layer stack, enabling high gain and high output power.
TEM view (Courtesy of G.Patriarche, CNRS/LPN)
||Control of strain in MOVPE grown AlGaInAs quantum wells: X-ray diffraction patterns are used to quantify both grown layer thickness and composition.
In this example, simulated (in red) and experimental (in blue) patterns exhibit an excellent agreement. This enables assessment of the material quality of the 9-Quantum Well structure