GaN Devices for Power and Microwave

Our laboratory is developping GaN technology for advanced prototyping for our mother companies and our customers.

Our expertise is based on past activities on GaAs technologies for power microwave electronics supported by many articles and patents (InGaP/GaAs HBT, Gunn Diodes, InGaAs/GaAs pHEMT...) (more).

Our lab is involved in many French and European Projects such as: KORRIGAN, UltraGaN, MORGaN, Hyphen, ATTITUDE 4G+, TERAGAN, TOPOGAN, E3CAR, REI HOT (more).

GaN for Microwave Devices Why using GaN? (more) GaN HEMT Discrete components & MMICs Various components can be fabricated: LNA, Oscillator, HPA, SPDT... both as discrete components for L&S bands (2GHz-4GHz) and MMICs for C&Ku bands (4GHz-20GHz) (more)
GaN for Power Electronics Why using GaN? GaN HEMTs (more).