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GaN for Microwave Devices: Why using GaN?
Physical properties superior to GaAs and Si
- High power density,
- High breakdown voltage.
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Johnson 's figure of merit |
GaN HEMT allows:
- Power, robustness, high linearity,
- Wideband frequency coverage,
- High voltage and high temperature operation.
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Device output power as a function of frequency |
GaN HEMT is useful in applications such as:
- Airborne radars,
- Electronic warfare,
- Solid state transmitters,
- Wideband sensors for advanced multi-function & multi-role systems,
- Wireless communication networks,
- Other Telecom & Space applications.
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Discrete power HEMT |
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