Laser Diodes & Optical Amplifiers

• 0.8 µm
• 1.55µm
  • DFB (Distributed FeedBack) laser
    • Ku band
    • Wide wavelength range
  • III-V laser on Silicon
  • EAM (Electro-Absorption Modulator) from 10 to 100 Gb/s
    • Polarization insensitive
    • Integrated with a laser (EML)
    • Opto circuit : 4xDFB -EAM
  • SOA (Semiconductor Optical Amplifier)
    • Very large optical bandwidth (up to 150nm)
    • Polarization independent
    • High speed modulation ( up to 10 Gb/s)
  • R-SOA & R-EAM-SOA
    • R-SOA
    • R-EAM-SOA
  • MLL Mode locked Laser
    • Based on Quantum Dots
    • Narrow linewidth
    • Short pulse generation (ps)
• 4-10µm QCL (Quantum Cascade Lasers)
  • High Power CW and Pulsed Fabry Perot QCL
  • Pulsed & CW DFB QCL
• Other devices

0.8 µm
DFB (Distributed Feedback) Laser diode at 852nm and 780nm Application Cs pumping for atomic clock Atomic clocks Atomic interferometers Features Emission wavelength: 852 nm Technology: GaAs Al-free active region semiconductor laser diode FP (Fabry-Perot) Laser diode at 780nm are also available. datasheet (852 nm)
1.55 µm
DFB
DFB - Ku band
1.5 µm DFB laser diodes for Ku-Band analog microwave optical emitters with : wide bandwidth (>18 GHz) low RIN (<-150 dB/Hz)  high linearity (input IP3>26 dBm)
DFB - Wide wavelength range
Application according the wavelength Methane detection (1650nm) HCl detection (1742nm) Water detection (1368nm)... Features Single spatial mode laser with high power (20 mW CW at 1.65µm) & high reliability Tunable wavelength with current and temperature Single frequency laser with Side Mode Suppression Ratio stable with current and temperature datasheet (1650nm)	Tunable wavelength with temperature
EAM (Electro-Absorption Modulator) from 10 to 100 Gb/s
The single active layer Electro-absorption modulated Laser is a versatile source for 10 & 40 Gbit/s applications. It benefits from a large spectral and operating temperature range. This is due to the AlGaInAs structure and the automatic thermal compensation with a positive Bragg detuning, respectively.
100 Gb/s EML
1 Vpp/1.8W 86 Gb/s DER=2dB	OFC 2009: 100 Gb/s
SOA (Semiconductor Optical Amplifier)
Features Very large optical bandwidth (up to 150nm) Polarization independent High speed modulation ( up to 10 Gb/s)	SOA structure
Typical performance of 2 mm long QD-SOA (Al-free Quantum Dash Semiconductor Optical Amplifier, based on Buried Ridge Stripe technology)	Wide Optical Bandwidth
R-SOA & R-EAM-SOA
R-SOA
Typical bandwidth measurement of R-SOA
Typical eye-diagrams at 2.5 Gbps of R-SOA Chip on submount	Typical eye-diagrams at 5 Gbps of R-SOA Chip on submount
R-EAM-SOA
Application Colorless ONU for WDM/TDM Gigabit PON General purpose wavelength fed networks Features Integrated Reflective Electro-Absorption Modulator with Semiconductor Optical Amplifier Reflective one-fiber device Amplified 10Gb/s optical output Operating temperature range: 0°C to 70°
MLL (Mode locked Laser)
Based on Quantum Dots Semiconductor mode-locked lasers (MLL) are the laser sources which can generate pulses in the optical domain. These lasers have some unique features compared to other types of MLLs: they are very compact (length < 4 mm), the pulse repetition rate can be as high as 500 GHz, they have a high power conversion efficiency, they can generate very short pulses as narrow as few hundreds of femto-seconds. These unique features make semiconductor MLL suitable for a number of interesting applications, in particular, in the field of optical communications. First, MLLs generating short pulses have been used for high bit-rate optical transmission through optical time-division-multiplexing (OTDM). Bit-rate as high as 2.58 Tb/s on a single wavelength channel has been demonstrated. On the other hand, low repetition frequency MLLs can be used for optical sampling or optical clock distribution in micro-processors. Another interesting application is the all-optical clock recovery through the locking to the clock tone of the incoming data. Moreover, MLLs can be used to generate millimeter or terahertz waves through the mode-beating on high speed photodiodes or photoconductors Finally, MLLs can be used as comb generators for wavelength-division-multiplexing (WDM) transmission
Narrow linewidth & Short pulse generation (ps) QD laser diodes are attracting a great interest as they provide large lasing spectrum and fast carrier dynamics. They are perfectly suited for the generation of short pulses and for all-optical clock recovery. This figure shows the eye diagram of the incoming OTDM signal (top) and the recovered clock (bottom). A high quality clock signal with high extinction ratio (> 13 dB) is observed.
4-10µm QCL (Quantum Cascade Lasers)
Quantum Cascade Lasers are the only semiconductor laser sources operating at room temperature in pulsed or continuous modes over the 4-10 µm wavelength range On the right: Transmission Electron Microscopy image of a QCL structure with the typical conduction band diagram of a QCL
High Power CW and Pulsed Fabry Perot QCL
Application LIDAR (LIght Detection And Ranging)... Optical Counter Measure Sensor jamming or dazzling Features Fabry Perot Quantum Cascade Laser (QCL) Wavelength specified at 4.3µm and 4.65 µm. Continuous wave (CW) operation and Pulsed operation Above 200 mW CW at 20°C Operating temperature range: 10°C to 35°C Commercially available datasheets
Pulsed & CW DFB QCL
Application Spectroscopic gas detection (explosives, drugs, chemical weapon agents, toxic industrial chemicals and pollutant agents) Features Wavelength range covered : from 4 to 10 µm Control of the emission wavelength : +/- 1 cm-1 SMSR higher than to 30 dB Peak power higher than 200 mW Average power higher than 10 mW Commercially available datasheets
Other devices
SLD SuperLuminescent Diodes
Application OCT (Optical Coherent Tomography), early diagnostic and therapy monitoring in dermatology and ophthalmology Optical fibre sensors (Gyrometer, accelerometer etc) Features QD (Quantum dots) technology High power 50mW CW Ultra-broad spectral width (80 nm) The technology of this product has been developed within the FP6 IST project NANO-UB with the financial support from the European Commission.
975nm High Wall Plug Efficiency Laser Diode
Application Solid State Laser Pumping Fiber Laser Pumping Features Broad-Area (BA) Laser Diode Continuous wave (CW) output power Mounted on a passive heatsink High Wall Plug Efficiency The technology of this product has been developed within the FP6 WWW.BRIGHTER.EU project (www.ist-brighter.eu) with financial support from the European Commission Other wavelengths available: 808, 915 and 1060 nm High Brightness Tapered Laser Diode (at 975nm)