NEWS  PUBLICATIONS  PRESS RELEASE  PROJECTS  CONTACT US
Merry Christmas and Happy New Year
 Research & Development 
Laser Diodes & Optical Amplifiers
Photodiodes
Infra-Red Imagery Sensors
InP HBTs for Mixed Signals
GaN for Power & Microwave
 Products & Services 
Foundry Services
Datasheets
Certificate
 Core Competencies 
III-V Epitaxy
III-V/Si Device Integration
Processing
Design & Characterization
Packaging
 About Us 
Mission
Facilities
Contact & Location

What we propose

III-V Lab offers all steps of services for devices manufacturing, from device design to fully processed wafers (2” to 4”), based on GaAs and InP substrates and addressing small/medium volume.

III-V Lab has developped:

  • versatile device design and characterization for sources, detectors, and micro-electronic circuits, mainly for telecom and mid-infra-red applications,
  • processing and epitaxy-related know-how to provide high yield and reproducible state-of-the-art opto- and micro-electronic devices.


High level competence team

  • Electrical and optical modeling know-how of DFB, FP, DBR lasers, modulators and photodetectors,
  • MOVPE, MBE and GSMBE including regrowth (butt-joint, SAG, buried layers),
  • ‘Industrial-type’ processing environment including E-beam lithography, ICP etching and dielectric deposition …
  • Advanced characterization set-ups …

Please contact us at jean-louis.gentner@3-5lab.fr


Molecular Beam Epitaxy multi-wafer reactor



Optical lithography

 LEGAL NOTICE  All rights reserved © Copyright 2007 G.I.E Alcatel Thales III-V Lab, France.