What we propose
III-V
Lab offers all steps of services for devices manufacturing, from device
design to fully processed wafers (2” to 4”), based on GaAs and InP
substrates and addressing small/medium volume.
III-V Lab has developped:
- versatile
device design and characterization for sources, detectors, and
micro-electronic circuits, mainly for telecom and mid-infra-red
applications,
- processing and epitaxy-related know-how to provide
high yield and reproducible state-of-the-art opto- and micro-electronic
devices.
High level competence team
- Electrical and optical modeling know-how of DFB, FP, DBR lasers, modulators and photodetectors,
- MOVPE, MBE and GSMBE including regrowth (butt-joint, SAG, buried layers),
- ‘Industrial-type’ processing environment including E-beam lithography, ICP etching and dielectric deposition …
- Advanced characterization set-ups …
Please contact us at jean-louis.gentner@3-5lab.fr
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Molecular Beam Epitaxy multi-wafer reactor

Optical lithography |