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| SCOPES
OF ACTIVITY - Laser diodes for optronics - High frequency optoelectronics - Advanced photonic devices - Infra-red imaging - InP HBTs - GaN power HEMTs |
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| PROJECTS/PARTNERSHIPS |
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UltraGaN focuses on the development of innovative InAlN/(In)GaN HEMT devices for ultra high power microwave applications. The main advantages are stemming from high current capability together with lattice-matched crystals compared to more classical Al xGa 1-xN/GaN devices. The objective is to demonstrate 30W/mm at 10GHz. This approach could be used later on in all the transmission-reception chain requiring high power capability, e.g. base station, radars, point-to-point telecommunication, etc.
HYPHEN – Hybrid Substrates for Mass Production of High Frequency Electronics – IST The aim of this project is to develop composite substrates to replace plain costly monocrystalline silicon carbide substrate by advanced bonded wafers including for instance a low cost polycrystalline silicon carbide substrate as a substrate with on top a thin silicon carbide seed. The growth of HEMT device and the microwave performance validation are carried by the III-V Lab
 
Korrigan - Key Organisation for Research on integrated circuits in GaN technology – EDA The aim of this project involving 28 centres from 7 countries is to develop the AlGaN/GaN HEMT device for professional microwave applications. The main track is to develop the monolithic technology for GaN-based products. The work is spread from the elaboration of SiC wafers up to microwave demonstrators. Major building blocks of microwave functions have to be demonstrated with frequency operations up to 20GHz.
 GIBON - Opto-Electronic integration for 100 Gigabit Ethernet Optical Networks -IST This project addresses the challenges of very high bit rate opto-electronic transceivers suitable for 100 GbEthernet. In GIBON, the focus is on the demonstration of the highest speed components that integrate optoelectronic transducers (light modulator and photodetector) with their driving electronics.
 BRIGHTER.EU - World Wide Welfare: high BRIGHTness semiconductor lasER for gEneric Use - IST Pushing the limits of the current laser diode technology towards higher brightness is the objective of the Brighter.eu Consortium. This project addresses applications such as:
ZODIAC – Zero Order Dimension based industrial components Applied to teleCommunications - IST Self-assembled semiconductor Quantum Dots (QDs) bring fundamental advantages to lasers as they suppress temperature effects on laser threshold and efficiency. QDs also provide new degrees of freedom, investigated in ZODIAC, allowing the fabrication of compact, colourless and isolator-free telecom laser modules. 
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